JPH0435904B2 - - Google Patents

Info

Publication number
JPH0435904B2
JPH0435904B2 JP55040132A JP4013280A JPH0435904B2 JP H0435904 B2 JPH0435904 B2 JP H0435904B2 JP 55040132 A JP55040132 A JP 55040132A JP 4013280 A JP4013280 A JP 4013280A JP H0435904 B2 JPH0435904 B2 JP H0435904B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor device
source
region
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55040132A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55160473A (en
Inventor
Dorajuboodafu Danieru
Ran Nyuien Toron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7907803A external-priority patent/FR2452791A1/fr
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS55160473A publication Critical patent/JPS55160473A/ja
Publication of JPH0435904B2 publication Critical patent/JPH0435904B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP4013280A 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same Granted JPS55160473A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7907803A FR2452791A1 (fr) 1979-03-28 1979-03-28 Transistor a effet de champ a frequence de coupure elevee
FR7922301A FR2465317A2 (fr) 1979-03-28 1979-09-06 Transistor a effet de champ a frequence de coupure elevee

Publications (2)

Publication Number Publication Date
JPS55160473A JPS55160473A (en) 1980-12-13
JPH0435904B2 true JPH0435904B2 (en]) 1992-06-12

Family

ID=26221079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4013280A Granted JPS55160473A (en) 1979-03-28 1980-03-28 Semiconductor device and method of fabricating same

Country Status (5)

Country Link
US (1) US4471366A (en])
EP (1) EP0017531B1 (en])
JP (1) JPS55160473A (en])
DE (1) DE3068161D1 (en])
FR (1) FR2465317A2 (en])

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
FR2469002A1 (fr) * 1979-10-26 1981-05-08 Thomson Csf Dispositif semiconducteur a effet de champ pour hautes frequences et transistor et dispositif a transfert de charges utilisant un tel semiconducteur
EP0033037B1 (en) * 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices
JPS5953714B2 (ja) * 1979-12-28 1984-12-26 富士通株式会社 半導体装置
EP0317993A1 (en) * 1979-12-28 1989-05-31 Fujitsu Limited Heterojunction semiconductor devices
USRE33584E (en) * 1979-12-28 1991-05-07 Fujitsu Limited High electron mobility single heterojunction semiconductor devices
JPS56157068A (en) * 1980-05-08 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor
FR2489045A1 (fr) * 1980-08-20 1982-02-26 Thomson Csf Transistor a effet de champ gaas a memoire non volatile
FR2497603A1 (fr) * 1981-01-06 1982-07-09 Thomson Csf Transistor a faible temps de commutation, de type normalement bloquant
DE3279795D1 (en) * 1981-04-23 1989-08-03 Fujitsu Ltd High electron mobility semiconductor device
DE3279663D1 (en) * 1981-06-17 1989-06-01 Hitachi Ltd Heterojunction semiconductor device
JPS5891682A (ja) * 1981-11-27 1983-05-31 Hitachi Ltd 半導体装置
JPS58119671A (ja) * 1982-01-09 1983-07-16 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS58178572A (ja) * 1982-04-14 1983-10-19 Hiroyuki Sakaki 移動度変調形電界効果トランジスタ
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JPS6012774A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 半導体素子の製造方法
JP2621854B2 (ja) * 1985-05-31 1997-06-18 株式会社東芝 高移動度トランジスタ
DE3535002A1 (de) * 1985-10-01 1987-04-02 Telefunken Electronic Gmbh Sperrschicht-feldeffekttransistor
JP2716136B2 (ja) * 1988-01-14 1998-02-18 日本電気株式会社 半導体装置
US5060031A (en) * 1990-09-18 1991-10-22 Motorola, Inc Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6548333B2 (en) * 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US20030201459A1 (en) * 2001-03-29 2003-10-30 Sheppard Scott Thomas Nitride based transistors on semi-insulating silicon carbide substrates
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
US6982204B2 (en) * 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7901994B2 (en) * 2004-01-16 2011-03-08 Cree, Inc. Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7084441B2 (en) * 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7238560B2 (en) * 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US20060017064A1 (en) * 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7709859B2 (en) * 2004-11-23 2010-05-04 Cree, Inc. Cap layers including aluminum nitride for nitride-based transistors
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) * 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7465967B2 (en) 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US8575651B2 (en) 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7626217B2 (en) * 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US7544963B2 (en) * 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US7615774B2 (en) * 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
US7592211B2 (en) 2006-01-17 2009-09-22 Cree, Inc. Methods of fabricating transistors including supported gate electrodes
US7709269B2 (en) 2006-01-17 2010-05-04 Cree, Inc. Methods of fabricating transistors including dielectrically-supported gate electrodes
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50138776A (en]) * 1974-04-17 1975-11-05
US4160261A (en) * 1978-01-13 1979-07-03 Bell Telephone Laboratories, Incorporated Mis heterojunction structures
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping

Also Published As

Publication number Publication date
DE3068161D1 (en) 1984-07-19
EP0017531A1 (fr) 1980-10-15
FR2465317A2 (fr) 1981-03-20
JPS55160473A (en) 1980-12-13
FR2465317B2 (en]) 1983-03-04
EP0017531B1 (fr) 1984-06-13
US4471366A (en) 1984-09-11

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